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Updated: Jul 20, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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在TaS2/MoS2和TaS2/WSe2异构结构中调整的接触类型和接口电子属性

Xiangjiu Zhu1, Hongxing Jiang1, Yukai Zhang1

  • 1Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China.

Molecules (Basel, Switzerland)
|July 29, 2023
PubMed
概括

单层1T-TaS2与2H-MoS2和2H-WSe2形成高效的n型和p型肖特基接触. 这些接触可以通过电场和层间距来调整,用于新的光电应用.

关键词:
电气接触的电气接触电子属性 电子属性第一个原则是计算计算.两个维的异构结构.

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