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Updated: Jul 20, 2025

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一个Ku-波段GaN-on-Si MMIC功率放大器与一个不对称的输出组合器
Javier Del Pino1, Sunil Lalchand Khemchandani1, Daniel Mayor-Duarte2
1Institute for Applied Microelectronics (IUMA), Universidad de Las Palmas de Gran Canaria, 35017 Las Palmas de Gran Canaria, Spain.
Sensors (Basel, Switzerland)
|July 29, 2023
概括
本研究介绍了一种上 (GaN-on-Si) 高功率放大器 (HPA) 用于Ku频段主动雷达. 在GaN-on-Si固态功率放大器 (SSPA) 实现高输出功率,证明其适用于雷达应用.
科学领域:
- 微波工程 微波工程
- 半导体设备 半导体设备
- 雷达技术 雷达技术的使用
背景情况:
- 活动雷达系统需要高功率放大器 (HPA) 在Ku频段频率上有效运行.
- 在上化 (GaN-on-Si) 技术为高功率微波应用提供了有前途的特性.
研究的目的:
- 用GaN-on-Si技术设计和描述一个Ku频MMIC HPA用于使用GaN-on-Si技术的主动雷达应用.
- 研究三级放大器架构,并通过设计修改优化性能.
主要方法:
- 一个三阶段的MMIC HPA使用OMMIC造厂的D01GH技术设计和制造.
- 进行了稳定性和热性分析,并在输出组合器中引入了不对称性以优化性能.
主要成果:
- 在HPA实现了39.5dBm的脉冲模式输出功率和23dB的峰值线性增益.
- 在16-19 GHz范围内获得了27%的排水效率和良好的输入/输出匹配.
- 制造出来的芯片的尺寸为5 × 3.5mm2.
结论:
- 基于GaN-on-Si的SSPA适用于实施高性能Ku频活跃雷达.
- 提出的MMIC HPA设计表明了需要高功率和效率的雷达系统的巨大潜力.
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