在和碳化探测器中的重离子辐射损伤
Carmen Altana1, Lucia Calcagno2,3, Caterina Ciampi4,5
1Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, Italy.
Sensors (Basel, Switzerland)
|July 29, 2023
概括
碳化 (SiC) 探测器比 (Si) 探测器具有超过100倍的抗辐射能力. 这些新的SiC设备为要求辐射硬度的科学应用提供了出色的稳定性和性能.
科学领域:
- 半导体物理 半导体物理
- 材料科学 是一种材料科学.
- 辐射检测检测辐射检测器
背景情况:
- 几十年来, (Si) 主导着半导体应用.
- 新兴应用需要具有优越抗辐射损伤的材料.
- 碳化 (SiC) 是一个有前途的替代品,因为它固有的强度.
研究的目的:
- 为了研究辐射损伤对新型大面积碳化 (SiC) p-n 连接探测器的影响.
- 为了评估这些SiC设备在各种辐射条件下的性能和稳定性.
- 为了比较SiC探测器与传统 (Si) 探测器的抗辐射性能.
主要方法:
- 辐射SiC p-n连接装置和具有不同粒子束和流动性的标准Si探测器.
- 系统地描述设备参数,包括泄漏电流,电荷收集效率和能量分辨率.
- 性能退化作为辐射暴露的函数的比较分析.
主要成果:
- 在辐射后,SiC探测器在关键参数 (线性,效率,分辨率) 中表现出了显著的稳定性.
- 泄漏电流仍然很低,电荷收集效率保持良好.
- C设备的辐射抵抗比探测器高两倍以上.
- 这种新的建造技术导致了高度坚固的SiC设备.
结论:
- 与相比,开发的SiC探测器提供了优越的辐射硬度.
- 这些先进的SiC设备为高辐射环境提供了出色的性能和稳定性.
- 西西里亚合作的探测器适合科学项目,要求高抗辐射.
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