基于用于有机场效应晶体管的简单电子缺陷酸转-1,3-二烯的半导体聚合物
Jianfeng Li1, Zhicai Chen1,2, Junwei Wang1
1Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China.
Angewandte Chemie (International ed. in English)
|July 31, 2023
概括
为低成本的n型聚合物合成了新的缺乏电子的构造块,即CNDE,CNFDE和CNDFDE. 这些材料使高性能有机场效应晶体管 (OFET) 有望获得商业应用.
科学领域:
- 材料科学 材料科学 材料科学
- 有机电子 有机电子
- 聚合物化学 聚合物化学
背景情况:
- 开发高性能,低成本的n型聚合物对于有机场效应晶体管 (OFET) 的商业化至关重要.
- 现有的方法经常面临关键电子缺陷单元的结构简单性和成本效益方面的挑战.
研究的目的:
- 为n型半导体聚合物设计和合成新型,结构简单,高度缺电子的构件.
- 在OFET应用中评估从这些构件中提取的聚合物的性能.
主要方法:
- 在trans-1,3-butadiene上连续引入和蓝功能,以产生CNDE,CNFDE和CNDFDE.
- 从低成本原料中进行两步高产合成.
- 聚合用二甲 (DPP) 和OFET设备的制造.
主要成果:
- 合成的CNDE,CNFDE和CNDFDE具有共平面脊柱和深层LUMO能量水平 (-3.034.33 eV).
- 在OFET中实现单极n型传输特征,其电子流动性超过1cm2V-1s-1.1.
- 从廉价的前体中证明了易于制备和高产量.
结论:
- CNDE,CNFDE和CNDFDE是低成本,高性能n型聚合物的有效基石.
- 这些新型单位为OFETs的商业化提供了一个有前途的途径.
- 这项研究为在有机电子中设计缺电子单元提供了有价值的见解.
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