基于神经形态系统的TiN-纳米晶嵌入3D垂直记忆器的突触突触的突触可塑性和非挥发性记忆特征
Seyeong Yang1, Taegyun Kim1, Sunghun Kim1
1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea. sungjun@dongguk.edu.
Nanoscale
|August 1, 2023
概括
这项研究探讨了用于神经形态计算的3D垂直电阻随机访问存储器 (VRRAM) 与化纳米晶体. 这些memristor显示出有前途的非易失性记忆和突触功能,使大脑类系统能够高效地识别模式.
科学领域:
- 材料科学 材料科学 材料科学
- 神经科学是一个神经科学.
- 计算机工程 计算机工程
背景情况:
- 垂直配置提供高密度存储解决方案,尽管复杂的制造,如原子层沉积 (ALD).
- 由于它们的突触可塑性和非挥发性记忆特性,memristors对神经形态系统至关重要.
研究的目的:
- 调查CMOS兼容的3D垂直堆叠记忆元 (Pt/Ti/HfO2/TiN-NCs/HfO2/TiN) 在神经形态应用中的潜力.
- 评估这些垂直电阻随机存储器 (VRRAM) 细胞的电气特性和突触功能.
主要方法:
- 制造3D垂直堆叠的记忆器结构.
- 电气性质的表征:I-V特性,保留和耐久性.
- 评估突触功能:在各种脉冲方案下增强,抑郁,EPSC和STDP.
主要成果:
- 在平面和VRRAM细胞中表现出卓越的非易失性记忆能力.
- 成功模拟突触功能,包括强化,抑郁和STDP.
- 通过增量脉冲增强的线性变化的电导率,在模拟中实现了更好的模式识别率.
结论:
- 使用TiN纳米晶体开发的VRRAM可用于神经形态系统.
- 这些设备显示出创造大脑启发的计算架构的潜力.
- 该研究强调了垂直结构对于高密度,高效的神经形态硬件的优势.
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