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相关概念视频

MOS Capacitor01:25

MOS Capacitor

839
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
839

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相关实验视频

Updated: Jul 20, 2025

Gradient Echo Quantum Memory in Warm Atomic Vapor
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电气可编程多层非挥发性光子随机访问存储器

Jiawei Meng1, Yaliang Gui1, Behrouz Movahhed Nouri1

  • 1Department of Electrical and Computer Engineering, George Washington University, Washington DC, 20052, USA.

Light, science & applications
|August 1, 2023
PubMed
概括
此摘要是机器生成的。

研究人员使用一种新的相变材料开发了一种低损失,非挥发性的光子随机访问存储器 (P-RAM). 这一进步使得高效的多位光子计算能够降低功耗并改善信号完整性.

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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Last Updated: Jul 20, 2025

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科学领域:

  • 光子学是指光子学的使用方法.
  • 材料科学 材料科学 材料科学
  • 计算机工程 计算机工程

背景情况:

  • 光子随机访问记忆 (P-RAM) 对于芯片上的光子计算至关重要,旨在减少光电子转换损失.
  • 现有的基于相变材料 (PCM) 的P-RAM存在高光损耗和低效编程,阻碍了实际应用.

研究的目的:

  • 为了演示一个多态,电程序,低损失的非挥发性光子记忆.
  • 使用宽带透明的相变材料 (Ge2Sb2Se5,GSSe),在无形状态下吸收最小.

主要方法:

  • 在在绝缘体平台上制造多位P-RAM,使用GSSe.
  • 电气编程和记忆状态的特征,包括振幅调制和插入损失.
  • 优化微型加热器的放置和可循环测试.

主要成果:

  • 证明了零静电,多位P-RAM与高效的振幅调制 (0.2dB/μm).
  • 实现了超低的插入损失 (4位内存的0.12dB),比现有的PCM信号损失比率提高100倍.
  • 验证了设备的稳定性,具有超过50万个开关周期.

结论:

  • 开发的基于GSSe的P-RAM为光子记忆提供了低损耗,非挥发性的解决方案.
  • 该技术支持用于神经网络,LiDAR和传感器等应用的光子功能和可编程电路.