在ReS2 /WS2中可控制的电阻切换,用于非易失性记忆和突触模拟的异构结构
Feihong Huang1, Congming Ke1, Jinan Li1
1Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|August 2, 2023
概括
使用ReS2 / WS2异构的新型记忆器提供了改进的非挥发性存储和突触功能. 这些设备具有可调节的电气和光学特性,优于先进计算架构的单个材料.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 计算机工程 计算机工程
背景情况:
- 记忆器对于克服传统·诺伊曼计算机架构的局限性至关重要.
- 2D范德瓦尔斯异构结构为先进的memristor开发提供了独特的特性.
- 将不同的材料集成到异构结构中,可以提高对光电子性能的可控性.
研究的目的:
- 为了展示具有电气和光学调节性的平面记忆器.
- 为了研究ReS2/WS2范德瓦尔斯异构结构在memristor应用中的性能.
- 探索这些设备中的生物突触功能和可塑性的实现.
主要方法:
- 基于ReS2/WS2范德瓦尔斯异构结构的平面记忆体的制造.
- 非挥发性电阻切换行为的特征,包括耐久性和保留性.
- 通过静电兴奋剂和通道长度减小来研究电能调性.
- 在电刺激下评估突触功能和可塑性.
- 用不同的照明条件分析电阻开关的光学调制.
主要成果:
- 与纯ReS2和WS2设备相比,显示出单极非挥发性行为,具有高的Roff/Ron比率 (高达10^6),优越的耐力和保留能力.
- 通过减少通道长度实现了设置电压的显著降低,同时保持了高的Roff/Ron比率.
- 通过静电兴奋剂证明可调节的设置电压 (4.50到0.40V).
- 成功实现了生物突触功能,包括依赖尖峰速率的可塑性和配对脉冲促进.
- 显示了电阻切换的光学调制,取决于照明能量和功率,归因于层间电荷传输.
结论:
- 范德瓦尔斯ReS2/WS2异构结构记忆器为非易失性记忆和神经形态计算提供了显著的优势.
- 电气和光学可调性提供了对设备性能的增强控制.
- 展示的突触功能和可塑性突出显示了大脑启发的计算应用的潜力.
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