相关实验视频

Updated: Jul 20, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Published on: November 1, 2013

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超薄Ga2O3纳米线中的尺寸依赖相位过渡

Jiaheng Wang1, Xiaoxi Guan1, He Zheng1,2

  • 1School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.

Nano letters
|August 2, 2023
PubMed
概括

研究人员研究了纳米级氧化物 (Ga2O3) 纳米线的相稳定性. 他们发现了尺寸依赖的相位过渡,这对于开发先进的半导体设备至关重要.

关键词:
晶体结构 晶体结构第一个原则是计算计算.纳米电线纳米线.阶段过渡 阶段过渡 阶段过渡

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