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多发性硬化病变会损害记忆,将记忆映射到连接的记忆电路中
Isaiah Kletenik1,2,3,4, Alexander L Cohen5,6,7,8, Bonnie I Glanz9
1Division of Cognitive and Behavioral Neurology, Brigham and Women's Hospital, 60 Fenwood Road, 9016H, Boston, MA, 02115, USA. ikletenik@bwh.harvard.edu.
Journal of neurology
|August 2, 2023
概括
多发性硬化症 (MS) 的记忆功能障碍与特定大脑电路中的白质病变有关,而不仅仅是整体病变负担. 对这种记忆电路的损伤完全解释了损伤体积和记忆障碍之间的关系.
科学领域:
- 神经科学是一个神经科学.
- 神经学 神经学
- 医疗成像医学成像
背景情况:
- 多发性硬化症 (MS) 影响近100万美国人,其中30-50%的人经历记忆功能障碍.
- 与MS相关的记忆功能障碍的神经解剖学基础仍然不清楚,争论的是它是否源于整体白质病变负载或特定的结构损伤.
研究的目的:
- 研究MS患者特定神经解剖学回路中的白质病变与记忆功能障碍之间的关联.
- 为了确定MS记忆功能障碍是否与特定的大脑电路有关,而不是扩散白质损伤.
主要方法:
- 从431名多发性硬化患者的结构性MRI和口头记忆得分的横截面分析.
- 使用经过验证的算法绘制白质病变位置的地图.
- 测试记忆功能障碍与病变总量之间的关联,以及病变与预定义的记忆电路的交叉点.
- 使用介导分析和数据驱动分析与功能和结构连接组来识别MS记忆电路.
主要成果:
- 在预定义的记忆电路内,总损伤量和损伤损伤都与记忆功能障碍相关.
- 记忆电路的损伤完全介导了总损伤体积和记忆性能之间的关系.
- 数据驱动的分析确定了关键的大脑区域,包括海马体,准海马体,体和带体,与记忆功能障碍相关,与预定义的电路保持一致.
结论:
- 与MS相关的记忆功能障碍与以海马为中心的特定大脑电路内的白质病变有关.
- 这种海马中心电路的损伤完全解释了整体损伤体积对记忆的影响.
- 使用标准MRI的基于电路的方法可能有助于定位和预测MS中高阶认知缺陷.
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