在半导体/介电接口上的电子属性的非侵入性和无接触性表征,使用光学第二波生成
Binit Mallick1, Dipankar Saha1, Anindya Datta1,2
1Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India.
ACS applied materials & interfaces
|August 4, 2023
概括
本研究介绍了一种使用第二和生成 (SHG) 来表征半导体/介电接口的非破坏性光学方法. 该技术量化了电荷密度和带偏移,提供了对接口状态的洞察力.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 光电学是指光电子产品.
背景情况:
- 光学二生成 (SHG) 是用于表面和接口分析的宝贵工具.
- 描述半导体/介电接口对于电子设备的性能至关重要.
- 现有的方法可能具有破坏性或缺乏定量准确性.
研究的目的:
- 为半导体/介电接口开发一种非破坏性,无接触的基于SHG的计量技术.
- 量化测量导电带偏移和接口电荷密度.
- 质量评估接口状态及其变化.
主要方法:
- 展示一种基于SHG的新型表征技术.
- 开发一个光学设置,用于监控时间依赖的第二和生成 (TDSHG).
- 使用带有载体动态的数值解析器来建模实验数据.
主要成果:
- 成功测量了导电带偏移和在Si/HfO2接口上的电荷密度的定量评估.
- 提取接口陷入的电荷类型 (捐赠者/接受者).
- 对接口状态密度 (Dit) 变化和带曲的定性分析.
结论:
- 基于SHG的方法为半导体/介电接口的表征提供了一种可靠的,非破坏性的方法.
- TDSHG的时间特征与接口电荷捕获动态相关.
- 该技术可以准确地提取接口上的电子属性.
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