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Updated: Jul 20, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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诱导线路道FET使用带轴道层与Ge源和充电增强绝缘

Jyi-Tsong Lin1, Yen-Chen Chang2

  • 1Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, ROC. jtlin@ee.nsysu.edu.tw.

Discover nano
|August 5, 2023
PubMed
概括

我们开发了一种用于低功耗电子的新型电荷增强绝缘带轴道层源感应道场效应晶体管 (CEI ETL GS-iTFET). 该设备实现了的下值摆动和高开/关电流比,降低了制造成本.

关键词:
费米级别的固定方式线路道的道设计斯科特基联系方式在下限值的波动下,下限值的波动.道效应的道效应

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Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Biasing of FET

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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Characteristics of MOSFET01:17

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Characteristics of JFET01:21

Characteristics of JFET

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