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Updated: Jul 20, 2025

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
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Published on: March 21, 2018

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制造具有丰富的和空隙和异质接口的CoSe2/CoP,用于不对称的超级电容器

Xingyue Wu1, Yiping Qiu1, Baozhu Yang1

  • 1Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China.

Journal of colloid and interface science
|August 5, 2023
PubMed
概括

这项研究提出了一种新型的正极材料,即空位丰富的二化/化 (v-CoSe2/CoP),用于不对称的超级电容器. 该材料表现出极好的电容和稳定性,为先进的储能解决方案铺平了道路.

关键词:
更多关于 Anionic 职位空缺不对称的超级电容器CoSe ((2)) /CoP) 的合作伙伴组织.国家密度的密度.不同质的接口 不同质的接口

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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