相关实验视频

Updated: Jul 18, 2026

Characterization of Electrode Materials for Lithium Ion and Sodium Ion Batteries Using Synchrotron Radiation Techniques
10:03

Characterization of Electrode Materials for Lithium Ion and Sodium Ion Batteries Using Synchrotron Radiation Techniques

Published on: November 11, 2013

25.5K

洞察 graphdiyne 中断面对离子电池阳极性能的影响

Zixuan Zhu1, Shuke Wang2

  • 1Queen Mary University of London Engineering School, Northwestern Polytechnical University Xi'an Shanxi 710072 China zxzhu_nwpu@126.com.

RSC advances
|August 7, 2023
PubMed
概括

在二维 (2D) 材料中的断裂表面 (FSs) 通过改善储存和动力学,显著提高离子电池阳极性能. 这些FS还提高了电子导电性,为先进的电池材料提供了新的设计策略.

更多相关视频

Failure Analysis of Batteries Using Synchrotron-based Hard X-ray Microtomography08:11

Failure Analysis of Batteries Using Synchrotron-based Hard X-ray Microtomography

Published on: August 26, 2015

8.9K
The Effect of Charging and Discharging Lithium Iron Phosphate-graphite Cells at Different Temperatures on Degradation10:41

The Effect of Charging and Discharging Lithium Iron Phosphate-graphite Cells at Different Temperatures on Degradation

Published on: July 18, 2018

15.5K

相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...