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Updated: Jul 19, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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在2D AFM三元V基石基因单层中依赖应变的磁性排序切换

Kaijuan Pang1, Xiaodong Xu2, Yadong Wei2

  • 1School of Physics, Harbin Institute of Technology, Harbin 150001, China. jiangyy@hit.edu.cn.

Nanoscale
|August 7, 2023
PubMed
概括

抗铁磁 (AFM) VXYSe4单层表现出可调节的磁性特性. 应变工程可以将它们的过渡温度提高到室温以上,使它们适合先进的纳米设备.

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