高密度垂直晶体管,距离尺寸低至20nm
Zhaojing Xiao1, Liting Liu1, Yang Chen1
1Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|August 8, 2023
概括
研究人员使用一种新型混合排水器开发了超大规模的垂直场效应晶体管 (VFET). 这一突破为高密度晶体管和集成电路实现了创纪录的低调尺寸.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术纳米技术
背景情况:
- 垂直场效应晶体管 (VFET) 通过使垂直堆叠成为可能,为超大规模设备提供了一条道路.
- 由于排水厚度和导电性之间的权衡,制造具有小距离尺寸的高密度VFET具有挑战性.
研究的目的:
- 开发一种简单的方法来缩放VFET排水尺寸到10nm以下.
- 为了实现垂直堆叠晶体管的创纪录低音程尺寸.
主要方法:
- 通过将7纳米厚的黄金 (Au) 与单层石墨烯相结合,创建了一个混合排水.
- 混合排水是范德瓦尔斯对3纳米厚的通道进行了层叠.
- 进行了网关堆缩,以减少VFET调度大小.
主要成果:
- 混合排水表现出金属行为,板电阻低 (≈100 Ω平方-1).
- VFETs实现了距离小到20nm的距离大小,在730 A cm-2.2的状态电流下.
- 三个VFET在59nm范围内垂直堆叠,创下了垂直晶体管中低距离尺寸的记录.
结论:
- 开发的方法成功地将VFET扩展到10nm以下的排水尺寸.
- 这种方法推动了VFET扩展和调度尺寸的极限,为高密度垂直晶体管和集成电路提供了新的可能性.
相关概念视频
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