在应变和电场下,调节谷分裂为二维的CrBr3/VSe2范德瓦尔斯异构结构
Xuesong Liang1, Jin Sun1, Zhizhou Yu1
1Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China.
概括
本研究探讨了应变和电场如何影响2D CrBr3/VSe2异构的磁性和谷电性质. 压缩应变和特定电场显著增强了潜在的数据存储应用的谷区分.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 量子信息科学 量子信息科学
背景情况:
- 谷地电子利用谷地自由度来进行先进的信息存储和量子计算.
- 二维 (2D) 范德瓦尔斯 (vdW) 异构结构提供可调节的电子和磁性特性.
研究的目的:
- 研究双轴应变和电场对2D CrBr3/VSe2 vdW异构结构的磁性,电子性和谷电性质的影响.
- 探索控制层间磁性配置和谷区分裂的潜力.
主要方法:
- 使用第一原则计算来模拟和分析异构结构的特性.
- 两轴应变和垂直电场被系统地应用.
主要成果:
- 在特定的压力 (<-2%) 和拉力 (> 4%) 应变下,观察到从平行到反平行对齐的间层磁相过渡.
- 垂直的电场没有改变平行层间的磁性配置.
- 压缩应变和电场 (VSe2到CrBr3) 在导电带中显著增强了谷区分裂.
- -4%的压力应变导致了反平行磁体配置和30.8meV的山谷分裂,是原始异构结构的三倍以上.
结论:
- 双轴应变和电场是调整二维磁性vdW异构结构的valleytronic属性的有效工具.
- 在CrBr3/VSe2的异构结构显示未来的valleytronic设备的希望.
- 通过外部刺激来定制磁性和电子性质对于下一代信息技术至关重要.
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