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选择性Al₂O₃原子层沉积在自组装单层上的分子机制

Youngjin Choi^1,2, Hyeng Jin Kim³, Eunchan Kim^1,2

¹Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science (IBS), Seoul 02841, Republic of Korea.

ACS applied materials & interfaces

|August 10, 2023

概括

区域选择性原子层沉积 (AS-ALD) 是半导体电路的关键. 一种新的温度控制方法提高了抑制剂的效率,克服了纳米尺度模式的局限性.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
表面化学表面化学

背景情况:

区域选择性原子层沉积 (AS-ALD) 对于先进的半导体制造至关重要.
乙醇自组装单层 (SAM) 是潜在的抑制剂,但效率较低.
了解ALD期间的SAM行为对于改善纳米模式至关重要.

研究的目的:

研究Al2O3沉积在alkanethiol-SAMs上的机制.
确定限制AS-ALD中SAM抑制效率的因素.
开发一种改进的AS-ALD技术,用于增强纳米模式.

主要方法:

利用温度依赖的振动总和频率生成光谱来研究SAM.
分析了Al2O3沉积机制在alkanethiol-SAMs上.
实施了一个不连续的温度控制的ALD技术.

主要成果:

确定SAM中热诱导的左边缺陷是减少抑制的主要原因.
证明了一种新的ALD方法,可以显著提高SAM抑制效率.
通过改进的技术实现了60个ALD周期 (6.6nm).

结论:

该研究阐明了SAM上的ALD机制,强调了缺陷的作用.
拟议的温度控制的ALD方法大大提高了抑制效率.
这项工作为提高纳米尺度模式和制造的AS-ALD提供了一条途径.

关键词:

选择性沉积的区域选择性沉积原子层沉积的原子层沉积.自组装的单层单层.表面分子结构的分子结构.振动总和频率生成光谱学振动总和频率生成光谱学

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