在选择性区域上Sn/InAsJosephson连接点培养了纳米导线,并设置了超导体蒸发阴影
Aranya Goswami1, Sanchayeta R Mudi2, Connor Dempsey1
1Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States.
Nano letters
|August 10, 2023
概括
我们开发了一种新的方法来创建超导体-半导体纳米线混合结构用于量子计算. 这种技术允许定制设计,并展示可调节的超级电流,为先进的量子设备铺平了道路.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子信息科学 量子信息科学
背景情况:
- 超导体-半导体纳米线混合结构对于量子信息处理至关重要.
- 选择性区域增长 (SAG) 允许灵活的纳米线制造,而现场蒸发确保了高质量的接口,以获得强烈的诱导超导.
研究的目的:
- 开发一种用于制造可定制超导体-半导体混合纳米结构的新技术.
- 使用这种方法来证明各种约瑟夫森连接配置 (S-N-S,NS,S-N-S-N-S) 的增长.
主要方法:
- 使用高面积比二氧化 (SiO2) 介电壁用于现场锡超导体蒸发.
- 在不打破真空的情况下,在平面中的化 (InAs) SAG纳米线上生长了超导体岛屿.
- 制造的S-N-S,NS和S-N-S-N-S 约瑟夫森交叉点几何.
主要成果:
- 在制造的混合纳米结构中展示了门和场调节的超级电流.
- 测量了超导间隙和关键场. 测量了超导间隙和关键场.
- 在S-N-S-N-S连接处观察到从2e到1e周期性的过渡,证实了设备的功能.
结论:
- 在现场开发的蒸发技术可以精确定制超导体-半导体混合纳米结构.
- 证明了可调节的超级电流和连接行为,验证了这些结构在量子信息处理应用中的可用性.
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