底部接触100纳米通道长度α-In2 Se3 在平面铁电内存
Shurong Miao1, Ryosuke Nitta1, Seiichiro Izawa1,2
1Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, Kanagawa, 226-8503, Japan.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|August 11, 2023
概括
这项研究表明,一个二维铁电半导体,alpha-In2Se3,可以充当非易失性存储器. 它在横向电场装置中实现了大内存窗口和高开/关比.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 固态物理 固态物理
背景情况:
- 对非易失性内存和以数据为中心的计算日益增长的需求需要先进的纳米级材料和设备架构.
- 二维 (2D) 铁电材料是电场效应晶体管的有希望的通道材料,因为它们的可切换二极管和集成灵活性.
研究的目的:
- 为了证明2D铁电半导体中的内平面 (IP) 铁电记忆效应,alpha-In2Se3.3.
- 为了研究alpha-In2Se3在具有横向电场配置的纳米间隙晶体管中的性能.
主要方法:
- 使用α-In2Se3作为纳米间隙电极的底部接触的100纳米通道长度装置的制造.
- 在侧向电场和底门调制下进行电气表征.
- 分析记忆特征,如记忆窗口,开/关比,保留和耐久性.
主要成果:
- 在alpha-In2Se3.3.中表现出显著的平面铁电记忆效应.
- 实现了13V的大型内存窗口和10^3.3的开/关比.
- 观察到稳定的非易失性记忆特征,记忆时间17小时,耐久度超过1200个循环.
结论:
- 带有alpha-In2Se3的侧底接触结构使得内存应用中有效的平面极化控制成为可能.
- 在平面内和平面外两极化之间的相互作用会影响内存效应,可以通过网关电压调节.
- 经过证明的非易失性记忆特性表明,在先进的记忆器件中有可能广泛使用.
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