缺陷不是0K:晶体中点缺陷的自由能量
Irea Mosquera-Lois1, Seán R Kavanagh1,2, Johan Klarbring1,3
1Thomas Young Centre & Department of Materials, Imperial College London, London SW7 2AZ, UK. a.walsh@imperial.ac.uk.
本综述探讨了材料中缺陷形成的自由能量,并结合了配置和振动术语. 机器学习等计算方法的进步使材料化学的缺陷预测更加准确.
科学领域:
- 材料科学 材料科学 材料科学
- 计算化学计算化学
- 固态物理 固态物理
背景情况:
- 缺陷显著影响材料性能,影响半导体,电池和催化剂.
- 缺陷形成的理论描述在上个世纪有所进步.
研究的目的:
- 审查在有限温度下缺陷形成的自由能量的描述.
- 讨论模拟缺陷的挑战和进展,包括元稳定配置和贡献.
- 突出在计算材料化学中实现准确缺陷预测的进步.
主要方法:
- 缺陷形成的自由能量描述,包括配置 (结构,电子,旋转) 和振动术语.
- 讨论计算技术,如机器学习力场和热力学集成等.
- 解决对超稳定缺陷配置和超出稀释极限的计算方面的挑战.
主要成果:
- 有限温度缺陷形成自由能量对于理解材料性质至关重要.
- 机器学习和热力学集成为准确的缺陷建模提供了新的途径.
- 克服瓶是实现准确缺陷预测的关键.
结论:
- 准确的缺陷预测对于设计先进材料至关重要.
- 计算材料化学即将迎来一个新的预测能力时代.
- 理论和计算方法的进一步开发正在进行中.
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