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在环境大气下进行AFM期间的SiC兴奋剂影响

Christina Villeneuve-Faure¹, Abdelhaq Boumaarouf², Vishal Shah³

¹LAPLACE (Laboratoire Plasma et Conversion d'Energie), Université de Toulouse, CNRS, UPS, INPT, 118 Route de Narbonne, CEDEX 9, 31062 Toulouse, France.

Materials (Basel, Switzerland)

|August 12, 2023

概括

导电原子力显微镜 (C-AFM) 可以导致不必要的碳化 (SiC) 化,由于水纳米微粒的形成. 这项研究揭示了C-AFM测量期间SiC化时的7 × 10¹⁸ at/cm³的兴奋剂值.

科学领域:

材料科学材料科学材料科学
表面科学是一门学科.
纳米技术纳米技术

背景情况:

电原子力显微镜 (AFM) 对于纳米级碳化 (SiC) 的表征至关重要.
导电型AFM (C-AFM) 可以诱导由于电场和环境条件下的水nanomeniscus形成而导致SiC的意外表面修饰.

研究的目的:

实验性地研究在C-AFM测量时对SiC的anodization的影响.
为了确定兴奋剂水平对SiC化的影响.
了解SiC-MOSFET结构中的局部氧化机制.

主要方法:

研究了受的SiC表层,其剂范围从5 × 10¹⁷到10¹⁹在/cm³.
使用偏差下的AFM力-距离曲线探测了水纳米微粒的存在和体积变化.
开发了一种2D轴对称的有限元素模型,其中包含水纳米模,氧化物层和兴奋剂水平,用于静电分析.
使用C-AFM表征平面SiC-MOSFET,并通过湿化学蚀刻确认氧化物组成.

主要成果:

水的nanomeniscus体积在极化下增加了三倍.
化发生在强烈依赖于兴奋剂的导电体制中,值为7 × 10¹⁸在/cm³.
在SiC-MOSFET上的C-AFM揭示了MOS通道两侧的局部氧化,对应于高度n型的兴奋剂区域.
诱导的氧化物被确定为一个SiOCH层.

结论:

该研究阐明了C-AFM期间SiC中局部阳极氧化的机制,受兴奋剂度和水纳米显微镜的影响.
在C-AFM下确定了SiC化的一个临界兴奋剂水平.
了解这种现象对于精确的纳米尺度表征和SiC的设备制造至关重要.

关键词:

在C-AFMM.一个叫做 MOSFET 的设备.原子力显微镜的原子力显微镜.添加化碳化的化碳.兴奋剂的使用兴奋剂的使用当地氧化局部氧化一个接一个的AFM表征.

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