相关实验视频

Updated: Jul 19, 2025

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition
14:01

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

Published on: May 22, 2015

42.8K

关于Mo-Si-B合金的研究进展的审查

Kong Yakang1, Cheng Wang1, Xiancong Chen1

  • 1Fundamental Department, Air Force Engineering University, Xi'an 710051, China.

Materials (Basel, Switzerland)
|August 12, 2023
PubMed
概括

-- (Mo-Si-B) 合金对超高温应用具有前景,但其室温性较差. 本综述探讨了兴奋剂策略和增材制造,建议振荡性烧结以提高Mo-Si-B合金的性能.

关键词:
在MoSiB合金中.兴奋剂和修改剂的使用.机械属性 机械属性 机械属性氧化阻力 氧化阻力 氧化阻力

更多相关视频

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.4K
Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide09:44

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Published on: May 23, 2025

123

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
281