分析溶液加工的氧化半导体的受体状状态分布,取决于其度
Dongwook Kim1, Hyeonju Lee1, Youngjun Yun2
1School of Information Science, Hallym University, Chuncheon 24252, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|August 12, 2023
概括
定量计算揭示了溶液处理的氧化物 (IZO) 薄膜晶体管 (TFT) 中的接受器样状态分布. 这种使用热能和可变度的分析,提供了对电动不稳定性和兴奋剂度影响的见解.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 设备工程 设备工程
背景情况:
- 溶液处理的氧化物 (IZO) 薄膜晶体管 (TFT) 的电动不稳定性阻碍了它们的实际应用.
- 了解状态密度 (DOS) 对于减轻IZO TFT中的不稳定性至关重要.
- 目前在这些设备中描述DOS的方法需要改进.
研究的目的:
- 在溶液处理的IZO TFT中量化计算接受器样状态分布.
- 为了研究的度对DOS概况的影响.
- 建立在IZO半导体中确定DOS的实用方法.
主要方法:
- 在不同温度下对IZO TFT电气特性进行分析.
- 使用阿雷尼乌斯图表来提取关键的电参数,如激活能量和平带电压.
- 使用简化电荷近似和基于梅耶-内尔德尔 (MN) 规则的场效应分析进行DOS估计.
主要成果:
- 成功计算了接受器样状态分布的定量概况.
- 确定了与度比相关的电气参数.
- 通过两种不同的方法,通过电荷-电压和载体-表面电位关系验证了DOS分布.
结论:
- 该研究提供了有效的方法来确定溶液处理IZO半导体中的DOS.
- DOS 配置文件提供了对受兴奋剂度影响的电行为的见解.
- 这项工作有助于理解和改善IZO TFTs的稳定性.
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