激活能量和双极切换属性用于ITOX:SiO2薄膜在电阻随机访问存储器件上的共
Kai-Huang Chen1, Chien-Min Cheng2, Na-Fu Wang1
1Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung 83347, Taiwan.
Nanomaterials (Basel, Switzerland)
|August 12, 2023
概括
本研究探讨了用于电阻随机存储器 (RRAM) 的氧化物 (ITO) 和二氧化 (SiO2) 薄膜. 开发的RRAM设备对未来的内存应用具有有前途的双极切换和非挥发性特性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术 纳米技术
背景情况:
- 电阻随机访问存储器 (RRAM) 为传统的非易失性存储器技术提供了一个有希望的替代方案.
- 目前正在研究氧化 (ITO) 和二氧化 (SiO2) 复合薄膜在RRAM设备制造中的潜力.
研究的目的:
- 为了研究 ITO:SiO2 薄膜 RRAM 设备的激活能量,双极电阻切换行为和电导特性.
- 分析制造过程中氧气气流对RRAM设备性能的影响,包括颗粒生长和缺陷减少.
主要方法:
- 通过在TiN/Si基板上使用协同喷射沉积来制备ITO:SiO2薄膜.
- /ITO:SiO2/TiN/Si RRAM设备结构是由和TiN电极制造的.
- 进行了电流-电压 (I-V) 测量,以描述RRAM设备的切换特性和传导机制.
主要成果:
- RRAM设备展示了双极电阻切换行为,具有不同的设置和重置状态.
- 在低电压下,跳动导电在设置状态中占主导地位,而在高电压下则占优势.
- 这些设备表现出显著的记忆窗特征和非挥发性特征.
结论:
- ITO:SiO2薄膜适用于制造具有可靠双极切换和非挥发性内存功能的RRAM设备.
- 在沉积过程中优化氧气气流对于通过影响谷物生长和减少缺陷来提高RRAM设备性能至关重要.
- 这些发现突显了基于ITO:SiO2的RRAM在下一代非挥发性内存应用中的潜力.
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