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对基于GaN的绿色微型LED阵列的激光升降过程中的光电性能进行比较分析

Chuanbiao Liu1,2, Feng Feng3, Zhaojun Liu2,3

  • 1Harbin Institute of Technology, Harbin 150006, China.

Nanomaterials (Basel, Switzerland)
|August 12, 2023
PubMed
概括

激光升降 (LLO) 通过提高光输出功率和外部量子效率来提高绿色化 (GaN) 微LED性能. 这一至关重要的过程优化了微型LED以实现先进的显示集成,而不会损坏GaN膜或蓝宝石基板.

关键词:
基于GaN的微型LED.这是一个微型LED显示屏.激光升降起飞方式光电性能表现的光电性能.

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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...