宽带SiGe-HBT低噪声放大器,具有电阻反和顺特峰值
Ickhyun Song1, Gyungtae Ryu2, Seung Hwan Jung3
1Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Sensors (Basel, Switzerland)
|August 12, 2023
概括
本研究介绍了一种用于多频段应用的宽带低噪声放大器 (LNA). 通过使用先进的电路技术,LNA实现了具有出色性能特性的广泛运行带宽.
科学领域:
- 电气工程 电气工程
- 微波工程 微波工程
- 半导体设备 半导体设备
背景情况:
- 低噪音放大器 (LNA) 是现代无线系统中的关键组件.
- 实现广泛的运行带宽和平坦的带内特征同时提出了一个重要的设计挑战.
研究的目的:
- 提出和设计适用于多频段传感,通信和雷达应用的宽带低噪声放大器 (LNA).
- 为了证明特定电路设计技术在实现宽带性能方面的有效性.
主要方法:
- 采用电压-电流 (shunt-shunt) 的负反配置.
- 集成的感应发射器退化用于输入匹配.
- 利用一个cascode阶段来减轻米勒电容效应.
- 在更高的频率上应用了分流峰值技术来获得增强补偿.
- 使用0.13μm- (SiGe) BiCMOS工艺制造了LNA.
主要成果:
- 实现了2.0-29.2 GHz的运行带宽.
- 测量了4.16dB (高达26.5GHz) 的噪声.
- 在3.3V供应电压下,其总功耗为23.1mW.
- 在12 GHz时获得了 -5.42 dBm的输入1dB压缩 (IP1dB) 点.
结论:
- 拟议的宽带LNA设计证明了多频段应用的强大可行性.
- 电路技术的结合有效地扩大了操作带宽,并平整了带内特征.
- 与最先进的设计相比,制造出来的LNA显示出具有竞争力的性能.
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