相关实验视频

Updated: Jul 19, 2025

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

5.8K

一个宽带真实时间延迟电路使用0.25μm的GaN HEMT技术.

Jeong-Geun Kim1, Donghyun Baek2

  • 1Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.

Sensors (Basel, Switzerland)
|August 12, 2023
PubMed
概括

这项研究介绍了一种使用化高电子移动性晶体管 (GaN HEMT) 技术制造的新型4位真实时间延迟集成电路 (IC),可实现宽带性能的无束式相位阵列天线.

关键词:
在 GaN GaN 中.阶段式阵列天线天线真正的时间延迟

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

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