ZnO,1000 S cm-1,ITO

Hailin Pan1, Jie Wang1, Zhi Chen1

  • 1State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Center for Advanced Low-Dimension Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.

概括

研究人员使用绝缘聚合物增强了非原子添加氧化物 (NAD-ZnO) 薄膜,达到超过1000 S cm-1的导电性. 这一突破使得NAD-ZnO能够在光电子中取代氧化物 (ITO).

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