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Updated: Jun 30, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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增长动力学和基质稳定性在高温分子束Epitaxy的AlN纳米线的AlN纳米线

P John1, M Gómez Ruiz1, L van Deurzen2

  • 1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany.

Nanotechnology
|August 14, 2023
PubMed
概括

我们优化了化 (AlN) 纳米线的生长,使用分子束表达. 纳米线制造的最佳条件涉及高温和用于增强光电子和压电应用的特定基板.

关键词:
在 AlNN 中,AlNN扩散长度是指扩散的时间长度.分子光束的表达式是epitaxy.纳米电线纳米线.点缺陷是指点上的缺陷.自动组装的自动组装机

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