相关实验视频

Updated: Jul 19, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.4K

玛辐射对MoS2单层物理性质的影响

Chintan P Chavda1, Ashok Srivastava1, Erin Vaughan2

  • 1Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA, USA. cchavd2@lsu.edu.

Physical chemistry chemical physics : PCCP
|August 15, 2023
PubMed
概括

玛辐射会在二硫化 (MoS2) 单层中产生点缺陷,从而可能增加它们的导电性. 这项研究探讨了辐射对空间应用的二维材料的影响.

更多相关视频

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.2K
Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide09:44

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Published on: May 23, 2025

123

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
378
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
419