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Updated: Jul 19, 2025

Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Published on: November 15, 2013

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在单个原子精确的石墨烯纳米带中,亚-5纳米接触和诱导的p-n连接形成

Pin-Chiao Huang, Hongye Sun, Mamun Sarker

    ACS nano
    |August 15, 2023
    PubMed
    概括

    研究人员使用直接写入方法在石墨烯纳米带 (GNRs) 上制造了纳米级金属接触物. 这种技术精确地控制了GNR的电子特性,使得在没有复杂的兴奋剂的情况下可以形成局部的p-n连接.

    关键词:
    电子束诱导的沉积是由电子束引起的.石墨烯纳米丝带是什么意思哈二化物纳米线的纳米线.纳米结构是一种纳米结构.扫描道显微镜扫描道显微镜扫描道光谱学 扫描道光谱是一种.

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    Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities11:42

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    Metal-Semiconductor Junctions01:24

    Metal-Semiconductor Junctions

    The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
    Schottky Barriers
    Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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