在基于GaN的HEMT中,光触发的2D电子气体与嵌入的p-GaN层的GaN HEMT
Optics letters
|August 15, 2023
概括
一种新型的正常关闭的高电子流动性晶体管紫外线光探测器 (UVPD) 使用p-n连接合的金属绝缘体半导体结构. 该设备实现了高亮度开/关比和快速响应时间,用于紫外线检测.
科学领域:
- 半导体设备 半导体设备
- 光电学是指光电子产品.
- 材料科学 材料科学 材料科学
背景情况:
- 高电子移动性晶体管 (HEMT) 对于高频应用至关重要.
- 紫外线光探测器 (UVPD) 对于各种传感和通信技术至关重要.
- 在HEMT中实现高性能正常关机运行仍然是一个挑战.
研究的目的:
- 提出和研究一种新的p-n连接合金属绝缘体半导体 (MIS) 通常关闭的高电子移动性晶体管 (HEMT) 紫外线光探测器 (UVPD).
- 分析设备的性能特征,包括暗电流,光开/关比,响应时间,响应能力和检测能力.
- 探索这种UVPD在紫外线通信和太空探索中的潜在应用.
主要方法:
- 制造一个p-n连接合的MIS-HEMT结构与AlN/U-GaN接口和三明治的p-GaN层.
- 两维电子气体 (2DEG) 耗尽和暗电流的特征.
- 在365nm照明下测量设备性能,排水源电压 (Vds) 为1V.
- 分析受内置电场影响的光生成载体动态.
主要成果:
- 拟议的UVPD显示了耗尽的2DEG,极低的暗电流为1.97 × 10-11 A.
- 在365nm照明下,实现了高亮度开/关比超过107.
- 快速上升和衰退时间分别为248.39微秒和584.79微秒.
- 特殊的性能指标包括2.33A/W的最大响应能力,793%的最大外部量子效率 (EQE) 和1.08×1013的检测能力 (D*).
- 内置的电场有效地加速光生成载体,提高设备的性能.
结论:
- 开发的p-n连接合的MIS-HEMT UVPD显示出出色的正常关闭特性和高性能.
- 该设备的低暗电流,高开/关比,快速响应和高响应性使其成为UV检测的有希望的候选人.
- 稳定的耐用性,可重复性和低驱动电压进一步提高了其适用于UV通信和太空探索等苛刻应用的适用性.
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