相关实验视频

Updated: Jul 19, 2025

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

聚合物刷间层上的溶液可加工的印烯:在环境条件下显著的N通道场效应晶体管特性

Ayse Can¹, Ibrahim Deneme¹, Gokhan Demirel²

¹Department of Nanotechnology Engineering, Abdullah Gül University, 38080 Kayseri, Turkey.

ACS applied materials & interfaces

|August 15, 2023

概括

我们为高性能有机场效应晶体管 (OFET) 开发了新的n型有机半导体. 链工程和表面修饰使在环境条件下实现了高电子流动性 (μe) 和电流调制.

科学领域:

材料科学:用于电子应用的有机半导体.
化学:新型π结合分子的合成和表征.
物理:有机场效应晶体管 (OFET) 中的电荷传输机制.

背景情况:

具有高电子流动性 (μe ≥ 0.5 cm2/ (V·s)),高电流调制 (Ion/Ioff ≥ 106-107) 和接近零的开启电压 (Von) 的溶液可加工的n型分子半导体对于有机场效应晶体管 (OFET) 至关重要,但落后于其他半导体类型.
开发这种材料需要仔细的分子设计,对薄膜形态的控制,以及优化的界面特性.

研究的目的:

设计,合成和表征一种可溶液处理的,低LUMO的,具有不同链长度的,可溶液处理的,低LUMO的,可溶液处理的,可溶液处理的,可溶液处理的,低LUMO的,可溶液处理的,可溶液处理的,可溶液处理的,可溶液处理的,可溶液处理的,可溶液处理的.
研究结构-性质关系,重点关注基链长度如何影响溶解度,固态包装和薄膜形态.
通过分子和接口工程,在环境条件下实现高电子流动性和性能.

主要方法:

合成具有不同链长度 (n=8,12,16) 的β,β'-C-TIFDMT.
物理化学表征包括溶解度和固体-同位素液体过渡度测量.
在超薄的聚烯刷表面上使用螺旋涂层制造OFET,并控制了接种密度.
使用诸如拉曼光谱和显微镜成像等技术进行薄膜表征.
在环境条件下对OFET设备的性能评估.

主要成果:

确定了过渡和溶解度之间的相关性,突出了链在调整凝聚性能量学中的作用.
用C12替代的半导体在热化过程中通过"拉链效应"表现出优异的薄膜结晶,导致具有层堆叠和有利的平面内π相互作用的大晶体.
使用C12-TIFDMT制造的OFET在环境条件下表现出极好的n通道行为,实现了高达~0.9cm2/~V·s的电子流动性 (μe),~107-108的电流调制 (Ion/Ioff) 和接近零的开启电压 (Von ≈ 0 V).

结论:

该研究在环境条件下展示了一种性能最高的溶液加工的n通道OFET.
它阐明了分子结构 (基链长度),自组装,薄膜特性和设备性能之间的关键关系.
涉及链和接口工程的设计策略为开发新型高电子流动性捐助者-接受者π架构提供了有希望的途径.

关键词:

基链工程基链工程基链工程低LUMO材料的使用情况.n型半导体 n型半导体有机场效应晶体管薄膜的结晶性薄膜的结晶性

更多相关视频

A Simple and Efficient Protocol for the Catalytic Insertion Polymerization of Functional Norbornenes

A Simple and Efficient Protocol for the Catalytic Insertion Polymerization of Functional Norbornenes

Published on: February 27, 2017

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

相关概念视频

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...