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Updated: Jul 19, 2025

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增强的电化学性能MoS2/Bi2S3以纳米复合材料为基础的电极材料,通过水热方法制备,用于超级电容器应用

Kamal Batcha Mohamed Ismail1,2, Manoharan Arun Kumar1, Ramasamy Jayavel3

  • 1Department of Electrical, Electronics & Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM) Bengaluru-561 203 India manokavi2011@gmail.com mohamedismailmk@gmail.com +91-7708587758.

RSC advances
|August 16, 2023
PubMed
概括

在二硫化 (MoS2) 中替换石可以提高超级电容器的性能. 与纯MoS2/Bi2S3纳米复合材料相比,与纯MoS2相比,纳米复合材料的特定电容和电化学性能得到了改善.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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