双自由层垂直磁道交叉点中的尖端动力学
Louis Farcis1, Bruno M S Teixeira1, Philippe Talatchian1
1Université Grenoble Alpes, CEA, CNRS, Grenoble-INP, SPINTEC, Grenoble 38000, France.
Nano letters
|August 17, 2023
概括
研究人员展示了模拟尖端神经元的电压控制的自旋电子设备. 这些紧的磁道连接为密集的神经网络提供非挥发性内存和低能耗.
科学领域:
- 这就是Spintronics.
- 不传统的计算方式
- 神经形态工程的神经形态工程
背景情况:
- 螺旋电子设备为计算提供非挥发性,快速响应和小型足迹.
- 在硬件中模拟神经元行为对于开发高效的人工智能至关重要.
研究的目的:
- 为了实验性地证明双自由层垂直磁道连接 (pMTJs) 中的电压驱动磁化动力学,以模拟尖端神经元.
- 通过直流偏差电压来研究尖端速率的控制,并评估神经网络应用的设备性能.
主要方法:
- 使用双自由层垂直磁道连接 (pMTJs).
- 研究了电压驱动磁化动力学.
- 通过调整直流偏移电压来控制输出峰值率.
主要成果:
- 通过使用pMTJs成功模拟了尖端神经元行为.
- 经过证明的无磁场操作和对外部磁场的强度.
- 实现了低能耗 (4-16 pJ/峰值) 和可扩展性.
结论:
- 电压驱动的pMTJ可以有效地模仿硬件中的神经元反应.
- 该技术适用于密集的神经网络,特别是嵌入式应用程序.
- 这种紧的pMTJ结构使得100nm以下的神经网络的发展成为可能.
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