宽带中红外非相互吸收使用磁化梯度epsilon-near-zero薄膜
Mengqi Liu1,2, Shuang Xia3,4, Wenjian Wan5
1Institute of Engineering Thermophysics, MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, China.
Nature materials
|August 17, 2023
概括
研究人员使用杂的InAs多层实现了宽红外非相互吸收. 这一突破克服了当前能源设备的局限性,允许灵活控制频率和带宽.
科学领域:
- 光学和光子学 在光学和光子学.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 磁光吸收是能源技术的关键,但实现强烈的红外非相互吸收是具有挑战性的.
- 现有的非互惠吸收器在狭窄的波段内运行,限制了它们的实际应用.
研究的目的:
- 在实验中实现强红外非相互吸收在宽带.
- 调查磁化近零 (ENZ) 行为和物质损失在非相互吸收中的作用.
- 为了实现对工作频率和非互惠带宽的灵活控制.
主要方法:
- 使用多层化 (InAs) 多层化 (InAs),其梯度为epsilon-near-zero (ENZ) 频率.
- 在适度的外部磁场下使用薄薄的ENZ薄膜 (<λ/40).
- 为了调整性能,INA膜中的多种兴奋剂度.
主要成果:
- 在广的中红外波段 (近10微米) 观测到高度不对称的吸收光谱.
- 证明磁性ENZ行为和物质损失对于强烈的非相互吸收至关重要.
- 通过材料设计,展示了对工作频率和非互惠带宽的灵活控制.
结论:
- 采用多层化InAs的拟议方法有效地实现了广红外非相互吸收.
- 这些原则可用于其他材料,如III-V半导体,金属和半金属.
- 这项工作为能源技术中先进的非互惠设备铺平了道路.
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