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不冷却的中红外传感通过芯片集成的低温生长的2D PdTe2迪拉克半金属启用
Longhui Zeng1, Wei Han2, Xiaoyan Ren3
1Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States.
Nano letters
|August 18, 2023
概括
研究人员开发了英寸级的2D二甲化物 (PdTe2),使用低温表达式用于未冷却的中红外 (MIR) 成像. 这一突破使得高分辨率的MIR传感和光通信能够在没有外部冷却的情况下实现.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 下一代中红外 (MIR) 成像需要自由冷却和高集成能力.
- 二维 (2D) 半金属提供了有前途的红外 (IR) 光反应,但在可扩展增长和芯片内集成方面面临挑战.
研究的目的:
- 为了证明2D半金属的可扩展的低温生长,用于未冷却的MIR传感.
- 使用二维材料开发集成的MIR光探测器和成像阵列.
主要方法:
- 采用低温自式上 (SSE) 方法来生长英寸级的2D二甲化物 (PdTe2).
- 在芯片上制造的PdTe2/Si Schottky连接光探测器和集成设备阵列.
- 研究了制造设备的超宽带光响应和成像能力.
主要成果:
- 通过低温SSE (∼300°C) 实现英寸级连续2D PdTe2膜,与后端线技术兼容.
- 展示了未冷却的芯片上光检测器,具有高达10.6微米的超宽带光响应和高特异性检测能力.
- 展示了具有集成设备阵列的高分辨率室温成像能力.
结论:
- 该SSE方法使2D半金属的低温,可扩展的生长为先进的IR应用.
- 开发了功能性未冷却的MIR光探测器和用于传感和光通信的成像系统.
- 在未冷却的MIR传感器和集成光子设备中为2D材料铺平了道路.
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