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Updated: Jul 18, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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解开点缺陷密度和载体定位增强的Auger重组对 (In,Ga) N/GaN量子井的效率下降的影响

R M Barrett1, J M McMahon2,3, R Ahumada-Lazo1

  • 1Department of Physics & Astronomy & Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.

ACS photonics
|August 21, 2023
PubMed
概括

在 (In,Ga) N/GaN量子井的效率下降并不取决于点缺陷密度. 原子模型显示,本地化提高了率,匹配实验数据,并建议外部因素限制绿色LED的效率.

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