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Updated: Jul 18, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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无形半导体氧化物基模拟电阻切换内存的接口粗效应和放松动态

G R Haripriya1, Hee Yeon Noh1, Chan-Kang Lee1

  • 1Division of Nanotechnology, DGIST, 42988, South Korea. dear.hjlee@dgist.ac.kr.

Nanoscale
|August 22, 2023
PubMed
概括

这项研究介绍了带有电极的无形氧化 (a-IGZO) 记忆器,显示了模拟电阻切换. 这些设备提供稳定的保留和成本效益高的神经形态计算的潜力.

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