在高温BiScO3-PbTiO3基陶中同时实现大压电和低介电损耗

Xiaodan Ren1, Mingyang Tang1, Xin Liu1

  • 1Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, P. R. China.

概括

Nb5+注增强了压电特性,并抑制了BiScO-PbTiO (BS-PT) 陶中的介电损失. 这一突破为苛刻的应用提供了稳定的高温压电材料.

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