调查由于移动扩散而导致顶端a-InGaZnO薄膜晶体管中的异常形现象
So Hee Park1, Min Young Kim1, Hyeong Wook Kim1
1Department of Applied Physics, Korea University, Sejong, 30019, Republic of Korea.
Scientific reports
|August 22, 2023
概括
高温回火的氧化 (IGZO) 薄膜晶体管 (TFT) 在正门偏差下表现出一个下值. 一层氧化 (Al2O3) 层通过阻断离子迁移,有效地防止了这种凸.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体设备物理 半导体设备物理
- 薄膜晶体管技术技术 薄膜晶体管技术
背景情况:
- 高温化无形氧化 (a-IGZO) 薄膜晶体管 (TFT) 最初显示出优越的电流-电压 (I-V) 特性.
- 观察到的一个关键问题是,在长时间的正门偏差应力下,在下值区域出现""的情况.
研究的目的:
- 为了调查a-IGZO TFTs中的下值形现象的起源.
- 确定减轻或消除的方法,以提高设备的稳定性和可靠性.
主要方法:
- 制造具有不同通道尺寸的顶端门a-IGZO TFT.
- 电气特征,包括在不同的门偏差条件下进行电流-电压 (I-V) 测量.
- 在a-IGZO层和玻璃基板之间引入一层氧化 (Al2O3) 中间层.
主要成果:
- 低值凸起因较高的正门电压和较长的应力持续时间而加剧,并且取决于通道长度.
- 从玻璃基板迁移到a-IGZO层的移动 (Na) 离子被确定为的可能原因.
- 插入一个Al2O3层成功地抑制了形现象,表明其作为屏障的有效性.
结论:
- 在a-IGZO TFTs中的子值是由于玻璃基板中的离子扩散引起的.
- 一个Al2O3中间层作为一个有效的屏障,防止Na+离子迁移和解决问题.
- 这一发现对于提高基于IGZO的电子设备的长期运行稳定性至关重要.
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