摄影诱导的非挥发性电阻切换行为在一个神经形态视觉系统的氧化合MoS2
Ke Chang1,2, Xinhui Zhao1,2, Xinna Yu3
1State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
Nano letters
|August 23, 2023
概括
研究人员使用氧化二硫化 (MoS2) 开发了光触发式记忆装置. 这些新型设备能够为先进的神经形态计算系统提供高效的图像传感,处理和存储.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 设备物理 设备物理
背景情况:
- 对于新型电子设备来说,外部电阻控制是关键.
- 现有的设备包括超导体,磁电阻和闪存.
研究的目的:
- 为了证明氧化合的MoS2.2.中光触发的非挥发性电阻切换.
- 为了探索神经形态应用的光学调节的突触特性.
主要方法:
- 使用氧化剂合的MoS2.2.制造的双终端设备.
- 光调节电阻切换和突触行为的特征.
- 在图像传感和存储的横杆架构中集成设备.
主要成果:
- 观察到稳定,光触发的非挥发性电阻开关.
- 可光学调节的突触特性,启/关比高达104.4.
- 集成设备实现了同时进行图像传感,预处理和存储.
结论:
- 氧化合的MoS2为光控制记忆提供了一个新的平台.
- 开发的设备提高了训练效率和图像任务的识别率.
- 这项工作为下一代光控制记忆和人工视觉系统为神经形态计算铺平了道路.
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