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在Cr³⁺中实现超宽带NIR-II发射-化Li(Sc,In)(Si,Ge) O₄基基于主机组合工程

Jiahui Zhang¹, Wenjing Huang¹, Jiaqi Fan¹

¹Key Laboratory of Drug Metabolism Research and Evaluation of the State Drug Administration, Guangdong Provincial Key Laboratory of New Drug Screening, School of Pharmaceutical Sciences, Southern Medical University, Guangzhou 510515, China.

Inorganic chemistry

|August 23, 2023

概括

研究人员使用 (Cr³⁺) 在一种新的橄结构中开发了新的近红外II (NIR-II) . 这些光体提供超宽带发射可调节从1110到1253纳米,适合先进的应用.

科学领域:

材料科学材料科学材料科学
固态化学固态化学
发光的光度是非常的低.

背景情况:

开发具有超宽带和可调节发射的近红外 (NIR) 光器是具有挑战性的.
大多数现有的NIR光器发射在1000nm以下,在半最大 (FWHM) 时的全宽窄 <200nm.

研究的目的:

通过使用Cr3+激活的Li,Sc,In,Si,Ge,O光来设计超宽带和可调节的NIR-II发射.
为了研究结构变化,晶体场强度和NIR发光特性之间的关系.

主要方法:

主体组合工程的Li ((Sc,In) ((Si,Ge) O₄.
加入Cr3+作为一个激活剂.
结构性,光学性和发光性质的表征.

主要成果:

实现可调节的NIR-II发射,峰值波长在1110至1253nm之间.
观察到FWHM> 300nm的超宽带发射,这是由于橄主体中Cr³⁺的扭曲八面体位.
在基于强度的发光温度计中已证明应用,相对灵敏度>2.0%K^-1.

结论:

成功开发了Cr3+激活Li,Sc,In,Si,Ge,O光体,具有可调和超宽带NIR-II发射.
建立了宿主结构,晶体场和NIR发光之间的相关性,用于光谱工程.
在长波长范围内 (1110-1253 nm) 开创了Cr3+NIR发光,用于潜在的温度计应用.

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