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在和双开关特性上的垂直InGaAs/GaSb核心纳米线的选择性区域增长

Hironori Gamo^1,2, Chen Lian^1,2, Junichi Motohisa^1,2

¹Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan.

|August 24, 2023

概括

研究人员使用印化 (InGaAs) 纳米线在选择性区域增长 (SAG) 中探索了抗 (GaSb) 面增长. 这项研究揭示了可控制的GaSb外生长和高级集成电路的独特双载波晶体管行为.

科学领域:

半导体纳米结构的半导体
经轴生长经轴生长经轴生长
量子井结构量子井结构

背景情况:

与反胺 (Sb) 相关的量子井表层被充分研究.
选择性区域增长 (SAG) 和纳米结构中的GaSb面增长仍然未被探索,这是由于Sb的适应性扩散和表面活性剂的影响.

研究的目的:

在SAG中使用InGaAs纳米线 (NWs) 调查GaSb面生长形态.
描述GaSb外形成的生长过程和控制机制.
探索InGaAs/GaSb核心外NWs的电子特性和潜在应用.

主要方法:

在Si模板上InGaAs纳米线 (NW) 的单体生长.
在InGaAs的NWs上GaSb的选择性区域增长 (SAG).
增长形态和电子性质的表征.

主要成果:

在NWs上GaSb的SAG中确定了四个关键的生长过程:横向过度生长,轴向生长,步骤流生长和Sb习惯性脱吸.
通过 GaSb 增长温度对主导生长过程的控制,使得 GaSb 形成平稳.
在垂直的InGaAs/GaSb核心外NW二极管中观察到适度的整正特性.
在单一晶体管架构中展示双载波调制 (p通道FET和n通道TFET模式).

结论:

在NW上SAG的GaSb面生长可以通过温度控制,从而产生光滑的外.
InGaAs/GaSb核心外NWs通过独特的双载波晶体管行为显示了集成电路的潜力.

关键词:

在InGaAs/GaSb 二极管二极管是如何使用的纳米线纳米线的使用方法选择性区域增长的选择性区域增长晶体管是一个晶体管.

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