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增长温度对自我纠正的BaTiO₃/ZnO异质连接对高密度横条数组和神经形态计算的影响

Harshada Patil¹, Shania Rehman², Honggyun Kim²

¹Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea; Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.

Journal of colloid and interface science

|August 25, 2023

概括

铁电半导体异质连接显示出对非易失性记忆和神经形态计算的前景. 优化的生长温度增强了电阻切换和突触行为,这对于高密度横条数组至关重要.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
计算机科学计算机科学

背景情况:

铁电材料由于其独特的特性,为非挥发性记忆和神经形态计算提供了一条途径.
交叉条数组 (CBA) 架构需要高效,可扩展的内存解决方案来克服集成挑战.

研究的目的:

研究用于非挥发性内存和突触应用的铁电半导体异质连接装置.
探索生长温度对Pt/BaTiO3/ZnO/Au异质连接的性能的影响.
展示这些设备在减少交叉通话和实现神经形态计算方面的潜力.

主要方法:

铁电半导体异质连接器件的制造 (Pt/BaTiO3/ZnO/Au).
调节BaTiO3铁电层生长温度 (350°C,450°C,550°C,650°C) 的调节.
电阻切换,非挥发性和突触特征的表征.

主要成果:

增长温度显著影响电阻切换行为.
在550°C时增强的铁电导致了更好的自我纠正和减少交叉声.
设备在人工突触中表现出线性导电率变化,识别准确率为91%.
铁电极化逆转和耗尽区域的动力学决定了设备切换.

结论:

铁电半导体异构结构适用于低功耗,高密度的横杆阵列和神经形态应用.
优化BaTiO3生长温度对于设备性能至关重要.
证明的自我纠正特性消除了对选择器设备的需求,简化了CBA设计.

关键词:

人工突触是一种人工突触.在BaTiO(3)/ZnO异质连接中.增长温度控制的铁电极化.高密度交叉杆阵列 (CBA) 是指高密度交叉杆阵列.自行纠正的非易失性记忆.

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