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Updated: Jul 18, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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对于发射在绿色光谱范围内的GaN-(In,Ga) N核心外纳米线的分子束表的生长机制

David van Treeck1, Jonas Lähnemann1, Oliver Brandt1

  • 1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany.

Nanotechnology
|August 25, 2023
PubMed
概括

我们在化 (GaN) 核心纳米线周围生长了绿色发射的化 (In,Ga) N外,使用分子束表观. 一个新的模型优化了合并以获得均的外厚度,这对于光电子应用至关重要.

关键词:
(在,Ga) NNN 在,Ga阴极光发光谱学 阴极光发光谱学核心外异构结构 核心外异构结构分子光束的表达式是epitaxy.纳米电线纳米线.

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Photoluminescence: Applications01:14

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Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
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