相关实验视频

Updated: Jul 18, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.2K

在3C-SiC MOS设备中,通过原子层沉积生长的层作为门绝缘体

Emanuela Schilirò1, Patrick Fiorenza1, Raffaella Lo Nigro1

  • 1Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale, 95121 Catania, Italy.

Materials (Basel, Switzerland)
|August 26, 2023
PubMed
概括

在立方碳化 (3C-SiC) 上的 (Al2O3) 门绝缘器可以减少平带电压变化. 与热ALD相比,与等离子增强的原子层沉积 (ALD) 产生了更好的绝缘性能.

关键词:
3C-SiC 3C-SiC 是一个这就是ALD.世界银行集团 (WBG)介电物质是一种介电物质.高-κ 的高-κ 的

更多相关视频

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition09:45

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Published on: July 26, 2016

12.4K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.4K

相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
837