在TDDB压力下对纳米PDSOI MOSFET临界参数降解的实验研究
Tianzhi Gao1, Jianye Yang1, Hongxia Liu1
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|August 26, 2023
概括
时间依赖的介电分解 (TDDB) 对部分耗尽的在绝缘体 (PDSOI) MOSFET 中的关键参数产生负面影响. 较厚的氧化物比超薄的更容易受到TDDB诱导的降解.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
背景情况:
- 基于的金属氧化物半导体 (MOS) 设备在各种高科技行业中至关重要.
- 收缩的晶体管大小增加了对时间依赖性介电分解 (TDDB) 的易感性.
- 现有的研究往往忽视了TDDB对设备参数的影响,而是专注于寿命和损伤机制.
研究的目的:
- 研究TDDB应力对部分耗尽上绝缘体 (PDSOI) MOSFET的关键参数的影响.
- 为了分析在TDDB加速应力下设备特征的退化.
- 为了比较TDDB对具有不同门氧化物厚度的设备的影响.
主要方法:
- 将TDDB加速应力实验应用于PDSOI设备上.
- 测量和分析转移特征曲线的变化.
- 监控的门电压和非状态泄漏电流.
- 评估的TDDB使用寿命.
主要成果:
- TDDB应力诱导门氧化物中的负电荷积累,改变电场分布.
- 观察到转移曲线和值电压的正变化.
- 证明,与厚门氧化物设备相比,超薄门氧化物设备的降解程度最小.
结论:
- 在PDSOI MOSFET中,TDDB显著降低了关键电气参数,特别是那些有更厚的氧化物.
- 负电荷的积累和随后设备参数的变化是TDDB的关键后果.
- 门氧化物厚度是影响在TDDB压力下设备可靠性的关键因素.
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