在SOI晶片中的残余应力的表征,使用MEMS杆梁
Haotian Yang1, Min Liu1, Yingmin Zhu1
1School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China.
Micromachines
|August 26, 2023
概括
一种新的低成本机械建模方法准确地测量了在绝缘体 (SOI) 晶片中的残余应力,这对于微电机械系统 (MEMS) 设备的可靠性和性能至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 机械工程 机械工程
- 半导体制造业 半导体制造业
背景情况:
- 在微电子机械系统 (MEMS) 制造中,在绝缘体 (SOI) 晶片是基本的.
- SOI晶片中的内部残余应力可能会损害MEMS设备的性能,可靠性和制造产量.
- 准确地描述这些压力对于优化MEMS设备设计和生产至关重要.
研究的目的:
- 引入一个具有成本效益的机械建模方法来量化SOI晶片中的残余应力.
- 通过实验来确定由SOI晶片制造的MEMS光束中的残余应变和应力.
- 通过将其结果与已确定的技术进行比较来验证拟议的方法.
主要方法:
- 开发一种机械模型,以将光束变形与余应力相关联.
- 使用开发的模型,实验确定MEMS光束中的残余应变.
- 结果与旋转光束偏移方法获得的结果进行比较分析.
主要成果:
- 提出的低成本方法成功地表征了SOI晶片中的残余应力.
- 在MEMS光束中实现了剩余应变和应力的实验性确定.
- 结果表明与旋转梁的偏移有很好的一致性,证实了方法的有效性.
结论:
- 开发的机械建模技术为SOI晶片的残余应力表征提供了有价值,低成本的解决方案.
- 该方法为SOI-MEMS设备的设计和优化提供了必要的数据.
- 该技术的可访问性扩大了其在各种MEMS制造场景中的适用性.
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