相关实验视频

Updated: Jul 2, 2026

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.2K

设计和模拟分析 3TnC MLC FeRAM 使用非破坏性读取和偏移取消感应放大器用于高密度存储应用程序的设计和模拟分析

Bo Peng1, Donglin Zhang2, Zhongqiang Wang1

  • 1Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.

Micromachines
|August 26, 2023
PubMed
概括

基于氧化 (Hf0.5Zr0.5O2) 的多级细胞铁电随机存取存储器 (FeRAM) 提供高密度存储. 电路优化,包括非破坏性读出和偏移取消感应放大器,改善操作边际,降低偏移电压,以获得可靠的多级状态读取.

关键词:
这是一个FeRAM.没有破坏性的读数.偏移取消感觉放大器的感觉放大器

更多相关视频

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice08:57

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

Published on: August 10, 2019

11.1K
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

8.1K

相关概念视频

Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...